High-efficiency perovskite nanocrystal light-emitting diodesviadecorating NiOxon the nanocrystal surface

被引:23
|
作者
Zheng, Weilin [1 ]
Wan, Qun [1 ]
Zhang, Qinggang [1 ]
Liu, Mingming [1 ]
Zhang, Congyang [1 ]
Wang, Bo [1 ]
Kong, Long [1 ]
Li, Liang [1 ,2 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Environm Sci & Engn, 800 Dongchuan Rd, Shanghai 200240, Peoples R China
[2] Shanghai Inst Pollut Control & Ecol Secur, Shanghai 200092, Peoples R China
基金
中国国家自然科学基金;
关键词
QUANTUM DOTS; CSPBBR3; PEROVSKITE; DIODES; HETEROSTRUCTURE; NANOPARTICLES; SUBSTITUTION; METAL; XPS;
D O I
10.1039/d0nr01681k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nickel oxides exhibit a great potential as hole transport layers for the fabrication of efficient perovskite light-emitting diodes (LEDs) due to their high carrier mobility and good energy band matching with perovskite nanocrystals. In this work, nickel oxides were directly decorated on the CsPbBr(3)nanocrystal surface through adsorption and a sequential oxidation treatment. The resulting sample shows a high photoluminescence quantum-yield of 82%. The LED using CsPbBr(3)nanocrystals with nickel oxides achieves a high external quantum efficiency (EQE) of up to 16.8% with a low turn-on voltage of 2.8 V, which is much superior to that of the counterpart LED based on pristine CsPbBr(3)nanocrystals (EQE = 0.7%, turn-on voltage = 5.6 V). The excellent performance of the nickel oxide decorated CsPbBr(3)nanocrystal device could be attributed to the better energy level matching between the decorated nanocrystals and the transport layers of the device and more balanced charge carrier injection. Furthermore, the operational lifetime of the nickel oxide decorated CsPbBr(3)nanocrystal device is 40 times longer than that of the pristine CsPbBr(3)nanocrystal device.
引用
收藏
页码:8711 / 8719
页数:9
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