Enhancement in light emission efficiency of Si nanocrystal light-emitting diodes by a surface plasmon coupling

被引:30
|
作者
Huh, Chul [1 ]
Choi, Chel-Jong [2 ]
Kim, Wanjoong [1 ]
Kim, Bong Kyu [1 ]
Park, Byoung-Jun [1 ]
Jang, Eun-Hye [1 ]
Kim, Sang-Hyeob [1 ]
Sung, Gun Yong [1 ]
机构
[1] Elect & Telecommun Res Inst, IT Convergence Technol Res Lab, Taejon 305350, South Korea
[2] Chonbuk Natl Univ, Dept BIN Fus Technol, Jeonju 561756, South Korea
关键词
SILICON NANOCRYSTALS; QUANTUM CONFINEMENT; NITRIDE; LUMINESCENCE; EMITTERS; DOTS;
D O I
10.1063/1.4711033
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report an enhancement in light emission efficiency form Si nanocrystal (NC) light-emitting diodes (LEDs) via surface plasmons (SPs) by employing Au nanoparticles (NPs). Photoluminescence intensity of Si NCs with Au NPs was enhanced by 2 factors of magnitude due to the strong coupling of Si NCs and SP resonance modes of Au NPs. The electrical characteristics of Si NC LED were significantly improved, which was attributed to an increase in an electron injection into the Si NCs due to the formation of inhomogeneous Schottky barrier at the SiC-indium tin oxide interface. Moreover, light output power from the Si NC LED was enhanced by 50% due to both SP coupling and improved electrical properties. The results presented here can provide a very promising way to significantly enhance the performance of Si NC LED. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711033]
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页数:5
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