Anisotropic hole spins in single and coupled self-assembled quantum dots

被引:6
|
作者
Sheng, Weidong [1 ,2 ]
Wang, Jian [2 ]
机构
[1] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1103/PhysRevB.82.073308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Anisotropy of hole spins in single and coupled self-assembled InAs/GaAs quantum dots is studied theoretically by means of an effective bond-orbital method. Compared with isotropic electron spins within the growth plane, it is found that the hole spins, although with much smaller positive g factors, can be highly anisotropic in single quantum dots. It is shown that the in-plane anisotropy of the hole spins can even reverse its sign as the height of the dots varies. In vertically coupled quantum dots, the in-plane hole g factors become comparable to the electrons, almost one order of magnitude larger than those in the single dots. Our result agrees qualitatively with the recent experiment [S. A. Crooker et al., Phys. Rev. Lett. 104, 036601 (2010)].
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页数:4
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