Structural and electronic properties of nitrogen-terminated diamond (100) surfaces

被引:7
|
作者
Gong, Mengmeng [1 ,2 ]
Wang, Qiliang [1 ,2 ]
Gao, Nan [1 ,2 ]
Li, Hongdong [1 ,2 ]
机构
[1] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Jilin Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
基金
中国国家自然科学基金;
关键词
Diamond; Nitrogen-termination; Crystal structure search; First-principles calculation; TOTAL-ENERGY CALCULATIONS; AFFINITIES; METALS;
D O I
10.1016/j.diamond.2021.108601
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Three types of nitrogen (N) coverage configurations of 1 ML-alpha, 1 ML-beta and 1 ML-gamma (ML: monolayer, 1 ML: one N atom per carbon atom) on diamond (100) surface are dynamically and thermally stable predicted by first-principles calculation. The electron affinities of the nitrogen-terminated diamond surfaces are positive of 3.03 eV, 2.87 eV and 2.64 eV for the cases of 1 ML-alpha, 1 ML-beta and 1 ML-gamma, in turn. The energy levels contributed from N-termination are presented in the bandgap of bulk diamond. This work provides theoretical guidance for the design and fabrication of N-terminated diamond-based electronic devices.
引用
收藏
页数:6
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