Thin layer formation in TeO2 single crystals due to migration of charge carriers

被引：0
|
作者：
Kulikov, A. [1 ,2 ]
Blagov, A. [1 ,2 ]
Marchenkov, N. [1 ,2 ]
Ilin, A. [3 ]
Pisarevsky, Yu. [1 ,2 ]
Kovalchuk, M. [1 ,2 ]
机构：
[1] Kurchatov Inst, Natl Res Ctr, Pl Akad Kurchatova 1, Moscow, Russia
[2] Russian Acad Sci, Fed Sci Res Ctr Crystallog & Photon, Shubnikov Inst Crystallog, Leninsky Prospekt 59, Moscow, Russia
[3] Lomonosov Moscow State Univ, Dept Phys, Leninskie Gory 1-2, Moscow, Russia
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2021年 / 77卷
基金：
俄罗斯基础研究基金会;
关键词：
near-surface structure; electrical double layer; charge carriers' migration; X-ray diffractometry;
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
PS-29-6
引用
收藏
页码：C985 / C985
页数：1
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