A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS

被引：110

作者：

Linten, D ^{[1
]}

Thijs, S ^{[1
]}

Natarajan, MY ^{[1
]}

Wambacq, P ^{[1
]}

Jeamsaksiri, W ^{[1
]}

Ramos, J ^{[1
]}

Mercha, A ^{[1
]}

Jenei, S ^{[1
]}

Donnay, S ^{[1
]}

Decoutere, S ^{[1
]}

机构：

[1] IMEC, DESICS, B-3001 Louvain, Belgium

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 07期

关键词：

CMOS; electrostatic discharges (ESD); low noise amplifier; radio frequency;

D O I：

10.1109/JSSC.2005.847490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated 5-GHz low-power ESD-protected low-noise amplifier (LNA), designed and fabricated in a 90-nm RF CMOS technology, is presented. This 9.7-mW LNA features a 13.3-dB power gain at 5.5 GHz with a noise figure of 2.9 dB, while maintaining an input return loss of - 14 dB. An on-chip inductor, added as "plug-and-play," i.e., without altering the original LNA design, is used as ESD protection for the RF pins to achieve sufficient ESD protection. The LNA has an ESD protection level up to 1.4 A transmission line pulse (TLP) current, corresponding to 2-kV Human Body Model (HBM) stress. Experimental results show that only minor RF performance degradation is observed by adding the inductor as a bi-directional ESD protection device to the reference LNA.

引用

页码：1434 / 1442

页数：9

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