Improvement in dielectric and tunable properties of Fe-doped Ba0.6Sr0.4TiO3 thin films grown by pulsed laser deposition

被引:0
|
作者
Gong, Jia [1 ]
Cheng, Jinrong [1 ]
Zhu, Weicheng [1 ]
Yu, Shengwen [1 ]
Wu, Wenbiao [1 ]
Meng, Zhongyan [1 ]
机构
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
关键词
D O I
10.1109/ISAF.2007.4393219
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fe-doped Ba0.6Sr0.4TiO3 (BST) thin films were prepared on Pt/Si substrates by the pulsed laser deposition method. The concentrations of Fe dopants vary from 0.1 mol% to 1.0 mol%. Our results indicate that a certain amount of Fe dopants can decrease the dielectric loss of BST thin films without causing the significant reduction of the tunability. The leakage current of BST thin films was also reduced by addition of Fe dopants. BST thin films doped with 0.3 mol% Fe ions show a minimum dielectric loss of 0.88 % at 10(6) Hz, which is 1.7 % for the undoped BST films. Moreover, the 0.3 mol% Fe-doped BST films reveal a maximum figure of merit (FOM) of 51, indicating the improved comprehensive dielectric and tunable properties.
引用
收藏
页码:216 / 218
页数:3
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