Synthesis of InP-based 1.3 mu m band gap pseudoalloy by organometallic vapor phase epitaxy

Synthesis of short period GaInAs/InP superlattices, or pseudoalloys, by organometallic vapor phase epitaxy for replacement of the mixed crystal GaInAsP deposited on InP is discussed. Raman scattering, double crystal x-ray diffraction, photoluminescence, and atomic force microscopy are used to investigate accumulative interface roughening and layer intermixing in the pseudoalloy. We demonstrate that pseudoalloy quality is not necessarily comprised by the presence of unintentional interfacial layers and show that thick (>2500 Angstrom) InP-based pseudoalloys with structural and optical properties that compare favorably with those of the random alloy can be synthesized. Finally, we present results on broad area 1.3 mu m lasers incorporating the pseudoalloy as the optical gain media in separate confinement heterostructure devices. (C) 1996 American Institute of Physics.