Electrical characteristics of poly(methylsilsesquioxane) thin films for non-volatile memory

被引：24
|
作者：
Ahmad, Zubair [1 ,2 ]
Ooi, P. C. [1 ]
Aw, K. C. [1 ]
Sayyad, M. H. [2 ]
机构：
[1] Univ Auckland, Dept Mech Engn, Auckland 1, New Zealand
[2] Ghulam Ishaq Khan Inst Engn Sci & Technol, Topi 23640, Swapi, Pakistan
来源：
SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 04期
关键词：
Polymethylsilsesquioxane; Spin casting; Metal-polymer-semiconductor (MPS) structure; Non-volatile memory; ENERGY-DISTRIBUTION; DESIGN; DIODES;
D O I：
10.1016/j.ssc.2010.12.002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this communication the electrical characteristics of poly(methylsilsesquioxane) (PMSSQ) thin films and the possibility of charge storage in the Au nanoparticle embedded PMSSQ film base memory element have been studied. PMSSQ films were sandwiched between Al and Si electrodes to fabricate metal-polymer-semiconductor (MPS) structures. The conduction mechanism in PMSSQ films has been investigated. The charge transport mechanism appears to be space charge limited current (SCLC) at the higher-voltage region. Various electrical parameters such as reverse saturation current, barrier height, ideality factor, rectification ratio, shunt and series resistance and charge carrier mobility in PMSSQ have been determined. C-V analysis is performed to confirm the memory effect for Au nanoparticles embedded MPS structures. A definite clockwise hysteresis is observed which indicates the possibility of charge storage in the Au nanoparticles embedded PMSSQ film. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：297 / 300
页数：4
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