Nanoelectronic synaptic devices and materials for brain-inspired computational architectures

被引:0
|
作者
Jha, Rashmi [1 ]
Mandal, Saptarshi [1 ]
机构
[1] Univ Toledo, Dept Elect Engn & Comp Sci, Toledo, OH 43606 USA
来源
关键词
Neuromorphic; synapse; transition metal oxide; memristive; low-power; STDP; Non-Volatile Memory; CIRCUITS;
D O I
10.1117/12.2065261
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To realize extreme-scale neuromorphic computation inspired by a biological brain, there is a need to develop two-terminal reconfigurable devices that can mimic the low-power specifications and scalability of a biological synapse. This paper discusses the synaptic characteristics of doped transition metal oxide based two-terminal devices. Spike-frequency dependent augmentation in conductance was observed. In addition, the devices could be reconfigured to different conductance states by changing the input pulse-width. This characteristic was used to demonstrate spike-timing dependent plasticity (STDP). The mechanism of reconfiguration is also briefly discussed.
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页数:4
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