Raman Scattering from a Surface Phonon in GaN Nanowalls and Regularly-Arrayed GaN Nanocolumns

被引：3

作者：

Komatsu, Y. ^{[1
]}

Mitsui, S. ^{[1
]}

Kuroe, H. ^{[1
,3
]}

Sekine, T. ^{[1
,3
]}

Yamano, K. ^{[2
,3
]}

Sekiguchi, H. ^{[2
,3
]}

Kikuchi, A. ^{[2
,3
]}

Kishino, K. ^{[2
,3
]}

机构：

[1] Sophia Univ, Dept Phys, Chiyoda Ku, 7-1 Kioi Cho, Tokyo 1028554, Japan

[2] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

Raman scattering; surface phonon; GaN; nanowalls; nanocolumns;

D O I：

10.1063/1.3666486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study Raman scattering of GaN nanowalls and regularly-arrayed GaN nanocolumns, and observe a peak from surface phonon (SP) around 705 cm(-1). The Raman intensity of SP decreases with increasing wall width in GaN nanowalls, while it increases with increasing column diameter in GaN nanocolumns. The Raman peak of SP has different polarization characteristics between GaN nanowalls and nanocolumns.

引用

页数：2

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