Surface enhanced Raman scattering by GaN nanocolumns

被引：6
|
作者：
Milekhin, A. G. [1 ]
Meijers, R. [2 ]
Richter, T. [2 ]
Calarco, R. [2 ]
Lueth, H. [2 ]
Sierra, B. A. Paez [3 ]
Milekhin, G. [3 ]
机构：
[1] Inst Semicond Phys, Novosibirsk 630090, Russia
[2] CNI Ctr Nanoelect Syst Informat, Inst Thin Films & Interfaces ISG1, D-52425 Julich, Germany
[3] Tech Univ, Inst Phys, Chemnitz, Germany
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期
关键词：
D O I：
10.1002/pssc.200565148
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The GaN nanocolumns were grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si(111) substrates. Scanning electron microscopy shows that the nanocolumns with diameters of 20-150 nm and lengths of 300-500 nm grow parallel to the [111] direction of the Si substrate. The vibrational spectrum (including optical and interface phonons) of the nanocolumns was studied using conventional and surface enhanced Raman scattering. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2065 / 2068
页数：4
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