Growth of high resistivity CdTe and (Cd,Zn)Te crystals

被引：2
|
作者：
Fiederle, M [1 ]
Fauler, A [1 ]
Babentsov, V [1 ]
Konrath, JP [1 ]
Franc, J [1 ]
机构：
[1] Univ Freiburg, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany
来源：
HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS V | 2004年 / 5198卷
关键词：
CdTe; (Cd; Zn)Te; doping; compensation; high resistivity; deep levels; detector properties;
D O I：
10.1117/12.506032
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
CdTe and (Cd,Zn)Te high resistivity crystals were grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. Different dopants had been applied to obtain resistivities of 5 x 10(8) Omegacm up to 2 x 10(10) Omegacm and 3 x 10(-3) cm(2)/V for the mobility-lifetime product for electrons for the indium doped material.
引用
收藏
页码：48 / 53
页数：6
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