Effects of heat treatment on structure of amorphous CNx thin films by pulsed laser deposition

被引:23
|
作者
Aoi, Y [1 ]
Ono, K
Sakurada, K
Kamijo, E
Sasaki, M
Sakayama, K
机构
[1] Ryukoku Univ, Fac Sci & Technol, Dept Chem Mat, Otsu, Shiga 5202194, Japan
[2] Ind Res Ctr Shiga Prefecture, Shiga 5203004, Japan
基金
日本学术振兴会;
关键词
carbon nitride; heat-treatment; laser abalation; structural properties;
D O I
10.1016/S0040-6090(01)00888-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Investigation of compositional and structural modifications induced by heat treatment of pulsed laser deposited amorphous CNx(x similar to 0.23) thin film has been carried out. Fourier transform infrared, Raman scattering, X-ray photoelectron spectroscopies were carried out to investigate compositional and structural properties of films. The heat treatment induces a nitrogen loss of the him. The N/C ratio decreased from 0.23 for the as-deposited film to 0.17 for the film heat treated at 800 degreesC. N1s electron spectra showed nitrogen atoms bonded to sp(3) hybridized carbon preferentially removed by heat treatment, although those bonded to sp(2) hybridized carbon were stable. Simultaneously, growth of graphitic domains, i.e. graphitization of the film by heat treatment was observed by Raman spectroscopy. The nitrogen loss and changes in bonding structure concerned with nitrogen atoms by heat treatment are caused by the graphitization of amorphous CNx film induced by heat treatment. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:62 / 67
页数:6
相关论文
共 50 条
  • [1] Fabrication of amorphous CNx :: B films by pulsed laser deposition
    Zhang, L
    Ma, HZ
    Zhang, BL
    [J]. IVESC2004: THE 5TH INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE PROCEEDINGS, 2004, : 352 - 354
  • [2] Deposition of CNx films by pulsed laser deposition technique
    Kida, S
    Yap, YK
    Aoyama, T
    Mori, Y
    Sasaki, T
    [J]. DIAMOND FILMS AND TECHNOLOGY, 1998, 8 (06): : 485 - 490
  • [3] Preparation of amorphous CNx thin films by pulsed laser deposition using a radio frequency radical beam source
    Aoi, Y
    Ono, K
    Kamijo, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) : 2318 - 2322
  • [4] REACTIVE PULSED-LASER DEPOSITION OF CNX FILMS
    ZHAO, XA
    ONG, CW
    TSANG, YC
    WONG, YW
    CHAN, PW
    CHOY, CL
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (20) : 2652 - 2654
  • [5] Thin amorphous chalcogenide films prepared by pulsed laser deposition
    Nemec, P
    Frumar, M
    Jedelsky, J
    Jelínek, M
    Lancok, J
    Gregora, I
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 : 1013 - 1017
  • [6] Preparation of the hard CNx thin films using NO ambient gas by pulsed laser deposition
    Aoqui, Shin-ichi
    Ohshima, Tamiko
    Ikegami, Tomoaki
    Ebihara, Kenji
    [J]. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2001, 2 (3-4)
  • [7] Heat-induced polymerization of a-CNx films grown by pulsed laser deposition
    Soto, G
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 230 (02): : 351 - 354
  • [8] Pulsed laser deposition:: a new technique for deposition of amorphous SiOx thin films
    Lackner, JM
    Waldhauser, W
    Ebner, R
    Lenz, W
    Suess, C
    Jakopic, G
    Leising, G
    Hutter, H
    [J]. SURFACE & COATINGS TECHNOLOGY, 2003, 163 : 300 - 305
  • [9] Role of Nitrogen in the Formation of CNx Films by Pulsed Laser Deposition
    Wang, Zhiping
    Ito, Hiroaki
    Masugata, Katsumi
    [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 2012, 40 (07) : 1815 - 1819
  • [10] Femtosecond pulsed laser deposition of amorphous, ultrahard boride thin films
    Stock, M
    Molian, P
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03): : 670 - 675