A 5-8 GHz wideband 100 W internally matched GaN power amplifier

被引：1

作者：

Zhao, Bochao ^{[1
]}

Ma, Xiaohua ^{[2
]}

Lu, Yang ^{[1
]}

Zheng, Jiaxin ^{[2
]}

Han, Wenzhe ^{[1
]}

Zhang, Honghe ^{[2
]}

Zhang, Yanlong ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China

来源：

IEICE ELECTRONICS EXPRESS | 2015年 / 12卷 / 06期

关键词：

GaN PA; internally matched; wideband; high power; EFFICIENCY;

D O I：

10.1587/elex.12.20150172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 5-8 GHz internally matched Gallium Nitride (GaN) power amplifier (PA) with 100 W output power was realized in this letter. The theory of load line match was used and extended. Power contour was depicted and revised by the output capacitance of GaN High Electron Mobility Transistor (HEMT). Impedance was matched into the -1 dB power contour in a wide frequency band due to the ladder transmission line matching network and broadband power combiner. With the package size of 14.5 * 14.8 mm, the proposed power amplifier has the maximum output power of 102 W with 45.8% associate power added efficiency (PAE) at the frequency of 6.5 GHz, and output power over 85 W and PAE over 42.8% at the frequency band of 5-8 GHz.

引用

页码：1 / 6

页数：6

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