Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon

被引：48
|
作者：
Martinelli, L [1 ]
Grilli, E
Guzzi, M
Grimaldi, MG
机构：
[1] Univ Milano Bicocca, INFM, Milan, Italy
[2] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy
[3] Univ Catania, INFM, I-95124 Catania, Italy
[4] Univ Catania, Dipartimento Fis, I-95124 Catania, Italy
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 04期
关键词：
D O I：
10.1063/1.1593815
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A simple silicon-based electroluminescent device has been realized, embedding beta-FeSi2 precipitates in the depletion region of a Si p-n junction by ion-beam synthesis, a process fully compatible with microelectronics technologies. Light emission peaked at about 1.6 mum has been observed up to room temperature. The luminescence signal is shown to be due to interband recombination in the crystalline nanoprecipitates. (C) 2003 American Institute of Physics.
引用
收藏
页码：794 / 796
页数：3
相关论文
共 50 条
  • [41] Room-temperature electroluminescence from dislocations in silicon
    Sveinbjornsson, EO
    Weber, J
    THIN SOLID FILMS, 1997, 294 (1-2) : 201 - 203
  • [42] Room-temperature 1.56 μm electroluminescence of highly oriented β-FeSi2/Si single heterojunction prepared by magnetron-sputtering deposition
    Chu, Shucheng
    Hirohada, Toru
    Nakajima, Kazutoshi
    Kan, Hirofumi
    Hiruma, Teruo
    Chu, S. (chu@crl.hpk.co.jp), 1600, Japan Society of Applied Physics (41):
  • [43] Room-temperature electroluminescence of a Si-based p-i-n diode with β-FeSi2 particles embedded in the intrinsic silicon -: art. no. 043529
    Li, C
    Suemasu, T
    Hasegawa, F
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)
  • [44] Room-temperature 1.56 μm electroluminescence of highly oriented β-FeSi2/Si single heterojunction prepared by magnetron-sputtering deposition
    Chu, S
    Hirohada, T
    Nakajima, K
    Kan, H
    Hiruma, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (11A): : L1200 - L1202
  • [45] On the crystallographic characteristics of ion beam synthesised β-FeSi2
    Shao, G
    Homewood, KP
    INTERMETALLICS, 2000, 8 (12) : 1405 - 1412
  • [46] ION-BEAM SYNTHESIS OF CUBIC FESI2
    DESIMONI, J
    BERNAS, H
    BEHAR, M
    LIN, XW
    WASHBURN, J
    LILIENTALWEBER, Z
    APPLIED PHYSICS LETTERS, 1993, 62 (03) : 306 - 308
  • [47] Facet-engineering enhanced room-temperature ferroelectric control of magnetism in semiconducting ?-FeSi2"
    Wu, Shuyi
    Wang, Anqi
    Shan, Yun
    Liu, Lizhe
    SOLID STATE COMMUNICATIONS, 2022, 356
  • [48] Microstructure characterization of ion-beam synthesized β-FeSi2 phase by transmission electron microscopy
    Sugiyama, M
    Maeda, Y
    THIN SOLID FILMS, 2001, 381 (02) : 225 - 230
  • [49] Synthesis of amorphous FeSi2 by ion beam mixing
    Milosavljevic, M
    Shao, G
    Bibic, N
    McKinty, CN
    Jeynes, C
    Homewood, KP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 188 : 166 - 169
  • [50] Photovoltaic properties of ion-beam synthesized β-FeSi2/n-Si heterojunctions
    Maeda, Y
    Umezawa, K
    Hayashi, Y
    Miyake, K
    Ohashi, K
    THIN SOLID FILMS, 2001, 381 (02) : 256 - 261
12345