Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon

被引：48
|
作者：
Martinelli, L [1 ]
Grilli, E
Guzzi, M
Grimaldi, MG
机构：
[1] Univ Milano Bicocca, INFM, Milan, Italy
[2] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy
[3] Univ Catania, INFM, I-95124 Catania, Italy
[4] Univ Catania, Dipartimento Fis, I-95124 Catania, Italy
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 04期
关键词：
D O I：
10.1063/1.1593815
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A simple silicon-based electroluminescent device has been realized, embedding beta-FeSi2 precipitates in the depletion region of a Si p-n junction by ion-beam synthesis, a process fully compatible with microelectronics technologies. Light emission peaked at about 1.6 mum has been observed up to room temperature. The luminescence signal is shown to be due to interband recombination in the crystalline nanoprecipitates. (C) 2003 American Institute of Physics.
引用
收藏
页码：794 / 796
页数：3
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