Pseudo-MOSFET transient behavior: Experiments, model, substrate and temperature effect

被引：0

作者：

Zhang, X. ^{[1
,2
,3
]}

Liu, F. Y. ^{[1
,3
]}

Li, B. ^{[1
,3
]}

Li, B. H. ^{[1
,3
]}

Luo, J. J. ^{[1
,3
]}

Han, Z. S. ^{[1
,2
,3
]}

Arsalan, M. ^{[4
]}

Wan, J. ^{[4
]}

Cristoloveanu, S. ^{[5
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100029, Peoples R China

[3] Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China

[4] Fudan Univ, State Key Lab ASIC & Syst, Shanghai, Peoples R China

[5] INP Grenoble Minatec, IMEP LAHC, CS 50257, F-38016 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2021年 / 186卷

基金：

中国国家自然科学基金;

关键词：

Pseudo-MOSFET; Lifetime; Zerbst method; Temperature; Substrate effect; Deep-depletion; SOI; INVERSION LAYER MOBILITY; CARRIER GENERATION; SI MOSFETS; SOI; LIFETIME; EXTRACTION; UNIVERSALITY; ENHANCEMENT; DEPENDENCE;

D O I：

10.1016/j.sse.2021.108131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical model is proposed to characterize the transient operation of Pseudo-MOSFET under gate pulses by considering the substrate effect. The analysis provides Zerbst-like expression of drain current with substrate biased in deep-depletion state. The model can be used for the extraction of carrier lifetime with process parameter variations. The dependence of temperature on carrier lifetime was also modeled by including the temperature-dependent parameters (carrier concentration and effective mobility). TCAD simulations and experiments validate our model with the temperature ranging from 300 K to 370 K.

引用

页数：7

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