Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

被引:194
|
作者
Wang, Hong [1 ,2 ]
Du, Yuanmin [3 ]
Li, Yingtao [1 ]
Zhu, Bowen [1 ]
Leow, Wan Ru [1 ]
Li, Yuangang [4 ]
Pan, Jisheng [5 ]
Wu, Tao [3 ]
Chen, Xiaodong [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap, Semicond Technol, Xian 710071, Peoples R China
[3] King Abdullah Univ Sci & Technol, Solar & Photovolta Engn Res Ctr, Thuwal 239556900, Saudi Arabia
[4] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[5] Inst Mat Res & Engn, Mat Ctr Innovat, Singapore 117602, Singapore
基金
新加坡国家研究基金会;
关键词
electronic devices; memory; proteins; resistive switching; threshold; THIN-FILM TRANSISTORS; SILK FIBROIN; ELECTRON-TRANSPORT; OXIDE; RESISTANCE; FABRICATION; GRAPHENE; INTERLAYERS; CONVERSION; MONOLAYER;
D O I
10.1002/adfm.201501389
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials.
引用
收藏
页码:3825 / 3831
页数:7
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