Synthesis and characterization of β-Ga2O3 nanorods

被引:8
|
作者
Zhuang, Huizhao [1 ]
Zhang, Shiying [1 ]
Zhang, Xiaokai [1 ]
Xue, Chengshan [1 ]
Li, Baoli [1 ]
Wang, Dexiao [1 ]
Shen, Jiabing [1 ]
机构
[1] Shandong Normal Univ, Inst Semicond, Coll Phys & Elect, Jinan 250014, Peoples R China
关键词
beta-Ga2O3; nanorods; magnetron sputtering; annealing;
D O I
10.1016/j.apsusc.2007.10.054
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A novel method was applied to prepare beta-Ga2O3 nanorods. In this method, beta-Ga2O3 nanorods have been successfully synthesized on Si( 1 1 1) substrates through annealing sputtered Ga2O3/Mo films under flowing ammonia at 950 degrees C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FTIR). The results show that the nanorod is single-crystalline Ga2O3 with monoclinic structure. The beta-Ga2O3 nanorods are straight and smooth with diameters in the range of 200-300 nm and lengths typically up to several micrometers. The growth process of the beta-Ga2O3 nanorods is probably dominated by conventional vapor-solid (VS) mechanism. (C) 2007 Elsevier B. V. All rights reserved.
引用
收藏
页码:3057 / 3060
页数:4
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