Comparing Control Topologies for Wide-Bandgap Power-Device Drivers: a Simulation Study

被引：0

作者：

Soldati, Alessandro ^{[1
]}

Barater, Davide ^{[1
]}

Concari, Carlo ^{[1
]}

Franceschini, Giovanni ^{[1
]}

机构：

[1] Univ Parma, DII, I-43100 Parma, Italy

来源：

IECON 2015 - 41ST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY | 2015年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Wide-bandgap power switches, based on SiC and GaN, are emerging on the semiconductor market. Standard resistor drivers are insufficient to exploit all the advantages of these new devices. Fine control over current and voltage waveforms during switching, equivalent on-state resistance and immunity to noisy environments, demand the development of dedicated drivers. This study aims at determining a suitable control topology for the gate (or base) terminal of the power device, in order to enact regulation of the switching waveforms and performances. Four different topologies, both open- and closed-loop are simulated, examined, and compared with the standard resistor driver.

引用

页码：2469 / 2474

页数：6

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