Effects of bismuth-doping on the properties of Cu(In, Al)Se2 thin films prepared by selenization of sputtered stacked precursors

被引：3
|
作者：
Zhang, Qiao [1 ]
Deng, Hongmei [2 ]
Yu, Jiejin [1 ]
Cao, Huiyi [1 ]
Chen, Leilei [1 ]
Tao, Jiahua [1 ]
Zheng, Xiaoping [3 ]
Yang, Pingxiong [1 ]
Sun, Lin [1 ]
Chu, Junhao [1 ]
机构：
[1] East China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
[2] Shanghai Univ, Lab Microstruct, 99 Shangda Rd, Shanghai 200444, Peoples R China
[3] Lanzhou City Univ, Lanzhou 730070, Gansu, Peoples R China
来源：
MATERIALS LETTERS | 2018年 / 213卷
基金：
中国国家自然科学基金;
关键词：
Semiconductors; Sputtering; Cu(In; Al)Se-2; Thin films; Structural; OPTICAL-PROPERTIES; GRAIN-GROWTH; SOLAR-CELLS; TEMPERATURE;
D O I：
10.1016/j.matlet.2017.11.004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of bismuth (Bi) doping on the properties of Cu(In, Al)Se-2 thin films by pre-depositing a thin layer of bismuth has been investigated systematically via the sputtering approach followed by a selenization treatment. It is demonstrated that the crystallinity of CIAS thin films has been affected by various content of Bi doping with no impurity phases presented by XRD patterns and Raman spectra. Moreover, the grain size in the obtained films has been significantly increased by the incorporation of Bi with less grain boundaries, which can be attributed to the low melting point of Bi, a fluxing agent during the grain growth process. In addition, all the thin films with various content of Bi doping have estimated band gaps around 0.95 eV, revealing that Bi doping has a faint effect on the optical properties in CIAS structure. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：19 / 22
页数：4
相关论文
共 50 条
  • [31] Effect of annealing temperature on properties of RF sputtered Cu(In,Ga)Se2 thin films
    Yu, Zhou
    Yan, Chuanpeng
    Yan, Yong
    Zhang, Yanxia
    Huang, Tao
    Huang, Wen
    Li, Shasha
    Liu, Lian
    Zhang, Yong
    Zhao, Yong
    [J]. APPLIED SURFACE SCIENCE, 2012, 258 (22) : 8527 - 8532
  • [32] Photoluminescence properties of Cu(InGa)Se2 thin films prepared by mechanochemical process
    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
    不详
    不详
    [J]. Jpn. J. Appl. Phys., 1 PART 2 (694-696): : 694 - 696
  • [33] Photoluminescence properties of Cu(InGa)Se2 thin films prepared by mechanochemical process
    Chiba, Yoshiyuki
    Yamada, Akira
    Konagai, Makoto
    Matsuo, Yoshihiro
    Wada, Takahiro
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) : 694 - 696
  • [34] Fabrication of Cu(In,Ga)Se2 Thin Film by Selenization of Stacked Elemental Layer with Solid Selenium
    Li, Zhao-Hui
    Cho, Eou-Sik
    Kwon, Sang Jik
    Dagenais, Mario
    [J]. PHOTOVOLTAICS FOR THE 21ST CENTURY 7, 2011, 41 (04): : 241 - 246
  • [35] Properties of Cu(In,Ga)Se2 thin films prepared by chemical spray pyrolysis
    Shirakata, S
    Kannaka, Y
    Hasegawa, H
    Kariya, T
    Isomura, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A): : 4997 - 5002
  • [36] Properties of Cu(In,Ga)Se2 thin films prepared by chemical spray pyrolysis
    Shirakata, Sho
    Kannaka, Yoshiaki
    Hasegawa, Harufumi
    Kariya, Tetsuya
    Isomura, Shigehiro
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (9 A): : 4997 - 5002
  • [37] Characteristics of Cu(In,Ga)Se2 Films Prepared by Atmospheric Pressure Selenization of Cu-In-Ga Precursors Using Ditert-Butylselenide as Se Source
    Hsiao, Sheng-Yu
    Yang, Pei-Ching
    Ni, Ho-Ching
    Yen, Kuo-Yi
    Chiu, Chien-Hua
    Lin, Pei-Shin
    Chen, Hung-Jung
    Wu, Cheng-Han
    Liang, Shih-Chang
    Ni, Guo-Yu
    Jih, Far-Wen
    Chiang, Cheng-Der
    Gong, Jyh-Rong
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (04) : H378 - H383
  • [38] Fabrication of Cu(In,Ga)Se2 thin films solar cell by selenization process with Se vapor
    Li, W
    Sun, Y
    Liu, W
    Zhou, L
    [J]. SOLAR ENERGY, 2006, 80 (02) : 191 - 195
  • [39] Growth and properties of stannite-quaternary Cu2ZnSnSe4 thin films prepared by selenization of sputtered binary compound precursors
    Wibowo, R. A.
    Kim, W. S.
    Munir, B.
    Kim, K. H.
    [J]. ADVANCED MATERIALS AND PROCESSING IV, 2007, 29-30 : 79 - 82
  • [40] Properties of Cu(In,Ga)(S,Se)2 thin films prepared by selenization/sulfurization of metallic alloys
    Zaretskaya, E. P.
    Gremenok, V. F.
    Zalesski, V. B.
    Bente, K.
    Schorr, S.
    Zukotynski, S.
    [J]. THIN SOLID FILMS, 2007, 515 (15) : 5848 - 5851
12345