Magnetic field dependence of the binding energy of shallow donors in GaAs quantum-well wires

被引:35
|
作者
Niculescu, E [1 ]
Gearba, A [1 ]
Cone, G [1 ]
Negutu, C [1 ]
机构
[1] Politechnica Univ Bucharest, Dept Phys, RO-77206 Bucharest, Romania
关键词
quantum wire; shallow donor; binding energy;
D O I
10.1006/spmi.2000.0895
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using a variational procedure within the effective-mass approximation we have calculated the binding energies of shallow-donor impurities in cylindrical GaAs quantum-well wires, in an axial magnetic field and an infinite confinement potential. In contrast to the previous results in quantum wells, we have found that, in the magnetic field, the impurity binding energy may be increased or decreased as a function of the impurity location in the quantum wire. On the basis of analysis of the variation of the binding energy with magnetic field strength, a method is proposed for experimentalists to confirm the presence of a shallow donor in the vicinity of the wire boundary. (C) 2001 Academic Press.
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页码:319 / 328
页数:10
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