Stability of ultra-shallow junctions formed by 0.2 keV boron implantation and spike annealing

被引：0
|
作者：
Shao, L [1 ]
Wang, X [1 ]
Bennett, J [1 ]
Larsen, L [1 ]
Rusakova, I [1 ]
Chen, H [1 ]
Liu, J [1 ]
Chu, WK [1 ]
机构：
[1] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
来源：
RAPID THERMAL AND OTHER SHORT-TIME PROCESSING TECHNOLOGIES III, PROCEEDINGS | 2002年 / 2002卷 / 11期
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中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
The stability of junctions formed by spike annealing remains a crucial issue for the device performance. In this study, 0.2 keV B-implanted silicon wafers were thermally spike annealed at temperature 1100 T. Samples were then furnace annealed under temperature between 550 and 750 T to study their stabilities. We have observed the anomalous diffusion of boron during the post-spike furnace annealing in nitrogen ambient. Anomalous B-diffusion in the tail region was observed in transient, e.g. with an enhancement of 10(3) x equilibrium at 700degreesC for first 60 s. It is conjectured that interstitials are generated during spike annealing and it will cause instability of junction during the following thermal processes.
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页码：333 / 337
页数：5
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