Ultra-shallow junctions formed using microwave annealing

被引：25

作者：

Xu, Peng ^{[1
]}

Fu, Chaochao ^{[1
]}

Hu, Cheng ^{[1
]}

Zhang, David Wei ^{[1
]}

Wu, Dongping ^{[1
]}

Luo, Jun ^{[2
]}

Zhao, Chao ^{[2
]}

Zhang, Zhi-Bin ^{[3
]}

Zhang, Shi-Li ^{[3
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[3] Uppsala Univ, Angstrom Lab, S-75121 Uppsala, Sweden

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 12期

基金：

中国国家自然科学基金;

关键词：

TEMPERATURE; DIFFUSION; REGROWTH; SI;

D O I：

10.1063/1.4799030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microwave annealing is shown to be viable for achieving low thermal budget formation of ultra-shallow junctions. Regrowth of a 10 nm thick amorphous Si layer that is generated during a Ge amorphization process prior to BF2 or As dopant implantation proceeds at rates up to 0.53 nm/min for BF2 and up to 0.33 nm/min for As at 370 degrees C. The fraction of electrical activation for implanted dopants is as high as 13% for BF2 and 32% for As with negligible diffusion at 540 degrees C. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799030]

引用

页数：4

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