Continuous-wave terahertz photomixing in low-temperature InGaAs

被引：0

作者：

Baker, C ^{[1
]}

Gregory, IS ^{[1
]}

Tribe, WR ^{[1
]}

Evans, MJ ^{[1
]}

Missous, M ^{[1
]}

Linfield, EH ^{[1
]}

机构：

[1] TeraView Ltd, Unit 302 304, Cambridge CB4 0WG, England

来源：

CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly-resistive low-temperature grown InGaAs, with a sub-500 fs carrier lifetime, is used in an alloptoelectronic continuous-wave terahertz photomixer system based on diode lasers. Interdigitated electrodes fabricated on epitaxial low-temperature grown In0.3Ga0.7As are used as photomixers to generate and detect radiation from microwave frequencies (<100 GHz) to beyond 1.0 THz.

引用

页码：367 / 368

页数：2

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