Ferroelectric domain imaging mechanism in high-vacuum scanning force microscopy

被引：0
|
作者：
Zeng, HR [1 ]
Yu, HF [1 ]
Chu, RQ [1 ]
Li, GR [1 ]
Yin, QR [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab Performance Ceram & Superfine Micro, Shanghai 200050, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2005年 / 22卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
High-vacuum scanning force microscopy of the domain structures in PMN-PT single crystals is investigated. It has been shown that under high vacuum conditions, the polarization charges are not effectively compensated for by intrinsic screening charges from the ferroelectrics. This result suggests that. the electrostatic tip-sample interaction plays a great contribution to the domain imaging mechanism in PAIN-PT ferroelectric. Single crystals under high vacuum conditions.
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页码：43 / 45
页数：3
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