Characteristics of surface recombination in silicon diode isolation grooves

被引：0

作者：

Gaubas, E. ^{[1
]}

Ceponis, T. ^{[2
]}

Salucha, D. ^{[2
,3
]}

Simkiene, I. ^{[3
]}

Uleckas, A. ^{[1
]}

机构：

[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-10223 Vilnius, Lithuania

[2] Joint Stock Co Vilniaus Ventos Puslaidininkiai, LT-08303 Vilnius, Lithuania

[3] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2007年 / 47卷 / 04期

关键词：

carrier lifetime; surface recombination; glass passivated isolation grooves; silicon high voltage devices;

D O I：

10.3952/lithjphys.47410

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Carrier surface recombination characteristics are investigated in silicon high voltage diodes with glass isolated grooves by microwave probed photoconductivity transients (MW-PCT) combining different excitation depths within the layered device structures. Comparative analysis of recombination parameters in the device isolation grooves and layered wafers passivated by iodine-ethanol solutions is performed to evaluate surface recombination rates. It has been revealed that electrochemical etching-glass melting steps involved within the passivation technological procedures for fabrication of diode isolation grooves induce a decrease of surface recombination velocity from 3.10(3) to 10 cm/s.

引用

页码：461 / 464

页数：4

共 50 条

[41] SPIN-DEPENDENT CARRIER RECOMBINATION ON A SILICON SURFACE
LVOV, VS
TRETYAK, OV
KOLOMIETS, IA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (06): : 661 - 664
[42] Surface recombination model of visible luminescence in porous silicon
Hajnal, Z
Deak, P
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 1053 - 1057
[43] STEADY STATE PHOTOCONDUCTIVITY AND SURFACE RECOMBINATION VELOCITY IN SILICON
KONTSEVOI, YA
IGLITSYN, MI
SOVIET PHYSICS-SOLID STATE, 1961, 3 (05): : 1063 - 1069
[44] CHANGES IN SURFACE RECOMBINATION VELOCITY IN SILICON HEATED IN VACUUM
MURINA, VV
NOVOTOTS.YF
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 979 - &
[45] TIME-RESOLVED STUDY OF SILICON SURFACE RECOMBINATION
BOKOR, J
HALAS, NJ
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (12) : 2550 - 2555
[46] SURFACE RECOMBINATION VELOCITY IN A SILICON OPTICAL-WAVEGUIDE
WILLANDER, M
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 45 - 49
[47] Recombination mechanisms in crystalline silicon: bulk and surface contributions
Susi, Enrichetta
INTERNATIONAL JOURNAL OF PHOTOENERGY, 1999, 1
[48] Effect of passivating oxides on the surface recombination velocity in silicon
Poggi, A., 1600, (113):
[49] The effect of narrowing of the band gap on surface recombination in silicon
Sachenko, A. V.
Sokolovsky, I. O.
SEMICONDUCTORS, 2007, 41 (06) : 673 - 678
[50] CHARACTERISTICS OF ALUMINUM-SILICON SCHOTTKY BARRIER DIODE
YU, AYC
MEAD, CA
SOLID-STATE ELECTRONICS, 1970, 13 (02) : 97 - +

← 1 2 3 4 5 →