Characteristics of surface recombination in silicon diode isolation grooves

被引：0
|
作者：
Gaubas, E. [1 ]
Ceponis, T. [2 ]
Salucha, D. [2 ,3 ]
Simkiene, I. [3 ]
Uleckas, A. [1 ]
机构：
[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-10223 Vilnius, Lithuania
[2] Joint Stock Co Vilniaus Ventos Puslaidininkiai, LT-08303 Vilnius, Lithuania
[3] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
来源：
LITHUANIAN JOURNAL OF PHYSICS | 2007年 / 47卷 / 04期
关键词：
carrier lifetime; surface recombination; glass passivated isolation grooves; silicon high voltage devices;
D O I：
10.3952/lithjphys.47410
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Carrier surface recombination characteristics are investigated in silicon high voltage diodes with glass isolated grooves by microwave probed photoconductivity transients (MW-PCT) combining different excitation depths within the layered device structures. Comparative analysis of recombination parameters in the device isolation grooves and layered wafers passivated by iodine-ethanol solutions is performed to evaluate surface recombination rates. It has been revealed that electrochemical etching-glass melting steps involved within the passivation technological procedures for fabrication of diode isolation grooves induce a decrease of surface recombination velocity from 3.10(3) to 10 cm/s.
引用
收藏
页码：461 / 464
页数：4
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