Thermal Management of High Heat Flux Nanoelectronic Chips

被引：60

作者：

Bar-Cohen, A. ^{[1
]}

Wang, P. ^{[1
]}

Rahim, E. ^{[1
]}

机构：

[1] Univ Maryland, Dept Mech Engn, College Pk, MD 20742 USA

来源：

MICROGRAVITY SCIENCE AND TECHNOLOGY | 2007年 / 19卷 / 3-4期

关键词：

Thermal Management; Thermal Contact Resistance; Annular Flow; Silicon Chip; Thermoelectric Cooler;

D O I：

10.1007/BF02915748

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Driven by the continuing Moore's Law evolution in chip technology, power dissipation of nanoelectronics chips could exceed 300W, with heat fluxes above 150W/cm(2), within the next few years, along with localized, sub-millimeter zones with heat fluxes in excess of 1kW/cm(2). New and novel cooling techniques, with the ability to selectively cool sub-millimeter "sun spots" while providing effective global cooling for high heat flux chips are needed. Several promising approaches, including the application of miniaturized silicon and BiTe thermoelectric coolers and direct cooling with dielectric liquids through thin film evaporation, will be described.

引用

页码：48 / 52

页数：5

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