CMOS Voltage-to-Frequency Converter With Temperature Drift Compensation

被引：19

作者：

Valero, M. R. ^{[1
]}

Celma, S. ^{[1
]}

Calvo, B. ^{[1
]}

Medrano, N. ^{[1
]}

机构：

[1] Univ Zaragoza, Elect Design Grp, Dept Elect Engn & Commun, Aragon Inst Engn Res, E-50009 Zaragoza, Spain

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2011年 / 60卷 / 09期

关键词：

Analog circuits; complementary metal-oxide-semiconductor (CMOS) analog integrated circuits; integrated circuits; signal processing; voltage-frequency conversion;

D O I：

10.1109/TIM.2011.2128690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new complementary metal-oxide-semiconductor (CMOS) differential voltage-to-frequency converter (VFC) suitable for sensor signal conditioning. Designed in a low-cost 0.18-mu m CMOS process, the proposed VFC consumes less than 0.4 mW at a 1.8-V supply. For a differential input range of 0-1.2 V, output frequency varies from 0.1 to 1.1 MHz with a linearity error of less than 0.4%. A new temperature compensation technique keeps the gain error below 2.4% over the whole frequency span for a range of -20 degrees C- + 120 degrees C.

引用

页码：3232 / 3234

页数：4

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