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The temperature characteristics of AlGaN/GaN double heterostructure HEMT's

被引：0
|
作者：
Lu, CZ [1 ]
Feng, SW [1 ]
Wang, DF [1 ]
Zhu, XD [1 ]
Fan, ZF [1 ]
Morkoc, H [1 ]
机构：
[1] Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100022, Peoples R China
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
temperature characteristics; AlGaN/GaN; double heterostructure; HEMT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaN/GaN double heterostructure high electron mobility transistor (DH-HEMT's) with a 2.0 mu m gate length and a 4 mu m channel length exhibiting good temperature characteristics has been demonstrated. The maximum drain current I-ds and extrinsic transconductance G(m) are 1300mA/mm 235mS/mm, 850mA/mm 174mS/mm and 475mA/mm 95mS/rnm, respectively at T = 194 degrees C, 20 degrees C and 400 degrees C. The temperature coefficient of I-ds and G are -1.4mA/degrees C and -0.24mS/degrees C respectively.
引用
收藏
页码：2284 / 2286
页数：3
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