Pixelless imaging device using optical up-converter

被引：29
|
作者：
Luo, H [1 ]
Ban, D [1 ]
Liu, HC [1 ]
Poole, PJ [1 ]
Buchanan, M [1 ]
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 03期
关键词：
charge coupled devices (CCDs); image converters; infrared detectors; infrared image sensors; infrared imaging; light-emitting diodes (LEDs); optical frequency conversion; pixelless imaging;
D O I：
10.1109/LED.2004.824245
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A pixelless imaging device based on optical wavelength conversion was designed and fabricated. The up-converter consisted of an integrated InGaAs/InP PIN photodetector and an InGaAsP/InP light-emitting diode (LED) epitaxially grown on a single InP substrate. Incoming 1.5 mum optical radiation was absorbed by the p-i-n detector and generated a photocurrent. The resultant photocurrent was used to bias the LED that emitted at 1 mum, which could be detected by conventional silicon charge coupled device. Pixelless imaging by the device has been demonstrated at room temperature.
引用
收藏
页码：129 / 131
页数：3
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