Epitaxial growth and large band-gap bowing of ZnSeO alloy

被引：44

作者：

Nabetani, Y ^{[1
]}

Mukawa, T ^{[1
]}

Ito, Y ^{[1
]}

Kato, T ^{[1
]}

Matsumoto, T ^{[1
]}

机构：

[1] Univ Yamanashi, Dept Elect Engn, Kofu, Yamanashi 4008511, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 06期

关键词：

D O I：

10.1063/1.1600510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSeO alloy was grown by molecular-beam epitaxy up to 1.3% O composition on GaAs substrate using rf plasma. The crystal structure of epitaxial ZnSeO alloy was zinc-blende. O composition was estimated by a strain-free lattice constant. No phase separation was observed by in situ reflection high-energy electron diffraction and x-ray diffraction. Photoluminescence intensity was larger than that of ZnSe. The peak energy shifted toward lower energies with increasing O composition. The band-gap energy determined by photoluminescence excitation spectra decreased with increasing O composition. A bowing parameter as high as 8 eV was obtained. This large band-gap bowing widens the controllable energy-gap range of II-VI semiconductor. (C) 2003 American Institute of Physics.

引用

页码：1148 / 1150

页数：3

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