A 3nV/√Hz rail-to-rail operational amplifier in silicon-on-sapphire with constant transconductance

被引：0
|
作者：
Weerakoon, Pujitha [1 ]
Sigworth, Frederick J. [1 ]
Kindlmann, Peter J. [1 ]
Culurciello, Eugenio [1 ]
机构：
[1] Yale Univ, Sch Engn & Appl Sci, New Haven, CT 06520 USA
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2010年 / 65卷 / 02期
关键词：
Operational amplifiers; Rail-to-rail amplifiers; Silicon-on-sapphire; Low-noise amplifiers; SOI-CMOS; MOSFETS; VOLTAGE; BULK; VLSI;
D O I：
10.1007/s10470-010-9484-6
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents the design, fabrication, and electrical measurement results from a low-noise high-performance amplifier fabricated in the 0.5 mu m silicon-on-sapphire (SOS) technology. The amplifier was designed with rail-to-rail input and output swing and constant transconductance in its entire common-mode range and targets biomedical instrumentation in SOS/SOI technologies. The amplifier reports 3 nv/root Hz of input-referred voltage noise at 10 kHz and has 0.4 mV of input-referred offset. The gain-bandwidth product of the amplifier is 12 MHz and the open-loop gain is 75 dB. The amplifier occupies 0.08 mm(2) of area and consumes 1.4 mW of power.
引用
收藏
页码：311 / 319
页数：9
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