High critical current density PLD YBCO deposited on highly textured IBAD MgO buffer layers

被引：0

作者：

Groves, JR ^{[1
]}

Arendt, PN ^{[1
]}

Jia, QX ^{[1
]}

Foltyn, SR ^{[1
]}

DePaula, RF ^{[1
]}

Dowden, PC ^{[1
]}

Kinder, LR ^{[1
]}

Fan, Y ^{[1
]}

Peterson, EJ ^{[1
]}

机构：

[1] Univ Calif Los Alamos Natl Lab, Superconduct Technol Ctr, Los Alamos, NM 87545 USA

来源：

PEROVSKITE OXIDES FOR ELECTRONIC, ENERGY CONVERSION, AND ENERGY EFFICIENCY APPLICATIONS | 2000年 / 104卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ion-beam assisted deposition (IBAD) was used to form bi-axially textured MgO films. These (001) oriented films were used as template layers for the subsequent growth of hi-axially textured YBCO films deposited by pursed laser deposition (PLD). The complete materials system architecture consisted of polished YSZ ceramic substrates, an initial layer of amorphous Si3N4 the IBAD MgO film, an e-beam deposited MgO film, a PLD SrTiO3, buffer layer, and the final PLD YBCO film. X-ray diffraction phi scans for these films resulted in full width half-maximum (FWHM) values of 7 degrees for the MgO template and 2.1 degrees for the best-textured PLD YBCO film. The transport critical current density (75K, self-field) for this YBCO film was 3.1 MA/cm(2).

引用

页码：219 / 226

页数：8

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