BIAS DEPENDANT NOISE WAVE MODELLING PROCEDURE OF MICROWAVE FETS

被引：0

作者：

Pronic-Rancic, Olivera ^{[1
]}

Marinkovic, Zlatica

Markovic, Vera ^{[1
]}

机构：

[1] Univ Nis, Fac Elect Engn, Dept Telecommun, Nish, Serbia

来源：

JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS | 2012年 / 63卷 / 02期

关键词：

MESFET; wave model; noise parameters; bias conditions; GAAS-MESFETS; TRANSISTORS; FREQUENCY; ACCURATE; SIGNAL;

D O I：

10.2478/v10187-012-0018-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new noise modelling procedure of microwave field-effect transistors (FETs) valid for various bias conditions is suggested in this paper. The proposed procedure is based on transistor noise wave model. With the aim to improve the noise wave model accuracy, the modification of the model is done by inclusion of the error correction functions into the noise wave model equations. It leads to significant reduction of deviations between measured and simulated noise parameters and therefore better noise prediction, is achieved. It is also shown that once determined error correction functions can be applied for accurate noise modelling of the same device for various bias conditions. The validity of the presented noise modelling approach is exemplified by modelling of a specific MESFET device in packaged form.

引用

页码：120 / 124

页数：5

共 50 条

[31] Superconducting noise bolometer with microwave bias and readout for array applications
Kuzmin, A. A.
Semenov, A. D.
Shitov, S. V.
Merker, M.
Wuensch, S. H.
Ustinov, A. V.
Siegel, M.
APPLIED PHYSICS LETTERS, 2017, 111 (04)
[32] OPTIMUM BIAS FOR THE OPTIMUM NOISE-FIGURE OF MICROWAVE MESFETS
JAVAN, H
ROSENBAUM, FJ
GOLDWASSER, RE
INTERNATIONAL JOURNAL OF ELECTRONICS, 1986, 60 (03) : 417 - 420
[33] Analysis of noise parameters sensitivities of microwave amplifiers with respect to bias
El-Mehdi, A
Vasilescu, G
Alquié, G
Fouad-Hanna, V
ICECS 2001: 8TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-III, CONFERENCE PROCEEDINGS, 2001, : 655 - 658
[34] Langevin approach to noise modelling of bipolar microwave transistors
Patti, F
Miceli, V
Spagnolo, B
NUCLEAR AND CONDENSED MATTER PHYSICS, 2000, 513 : 198 - 201
[35] Microwave transistors noise modeling by using variable noise wave temperatures
Pronic, OR
Markovic, VV
TELSIKS 2001, VOL 1 & 2, PROCEEDINGS, 2001, : 313 - 316
[36] INVESTIGATIONS ON MICROWAVE NOISE PARAMETERS OF GAAS-BASED HETEROJUNCTION FETS FOR LOW-NOISE MMIC-AMPLIFIERS
WENGER, J
AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1992, 46 (02): : 111 - 116
[37] Temperature noise constants extraction of mm-wave FETs from measured S- and noise parameters
Abdipour, A
Pacaud, A
1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 1723 - 1726
[38] Procedure for Radio Noise Measurement in Medium Wave Band
Landa, Iratxe
Maria Velez, Manuel
Arrinda, Amaia
2013 IEEE INTERNATIONAL INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE (I2MTC), 2013, : 166 - 171
[39] EFFICIENT TIME-DOMAIN NOISE MODELING APPROACH FOR MILLIMETER-WAVE FETS
Asadi, S.
Yagoub, M. C. E.
PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER, 2010, 107 : 129 - 146
[40] Global modelling of microwave active circuits by an efficient iterative procedure
Sboui, N
Gharsallah, A
Gharbi, A
Baudrand, H
IEE PROCEEDINGS-MICROWAVES ANTENNAS AND PROPAGATION, 2001, 148 (03) : 209 - 212

← 1 2 3 4 5 →