Trade-offs between performance and reliability in AlGaN/GaN transistors

被引：7

作者：

Waltereit, Patrick ^{[1
]}

Bronner, Wolfgang ^{[1
]}

Kiefer, Rudolf ^{[1
]}

Quay, Ruediger ^{[1
]}

Dammmann, Michael ^{[1
]}

Caesar, Markus ^{[1
]}

Brueckner, Peter ^{[1
]}

Mueller, Stefan ^{[1
]}

Mikulla, Michael ^{[1
]}

Ambacher, Oliver ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2 | 2012年 / 9卷 / 02期

关键词：

GaN; HEMT; reliability; performance; GANHEMTS;

D O I：

10.1002/pssc.201100294

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the trade-off between performance and reliability for AlGaN/GaN transistors. It is shown that changes in epitaxial growth, transistor design and process may lead to an improvement in performance but are, at the same time, accompanied by a degradation of device reliability. As a result we show strategies in order to balance performance and reliability as both are linked. Based on these findings we have realized state-of-the-art power bars for mobile communication systems and X-band MMICs for radar applications. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：365 / 368

页数：4

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