Optical properties of InGaN/GaN quantum wells with Si doped barriers

被引：39
|
作者：
Minsky, MS [1 ]
Chichibu, S
Fleischer, SB
Abare, AC
Bowers, JE
Hu, EL
Keller, S
Mishra, UK
DenBaars, SP
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Sci Univ Tokyo, Fac Sci & Technol, Noda, Chiba 278, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 11B期
关键词：
InGaN; GaN; multi-quantum wells; Si; doping; photoluminescence;
D O I：
10.1143/JJAP.37.L1362
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and photoluminescence excitation (PLE) spectroscopy. The room temperature carrier lifetime depends strongly on the Si doping level in the quantum well barriers, decreasing from 10 ns to ins as the doping level is increased from unintentionally doped to 5 x 10(18) cm(-3) (Si:GaN). The shift between the absorption edge and emission peak decreases from 220 meV to 110 meV as the doping is increased. Temperature dependent photoluminescence measurements indicate a higher density of non-radiative centers in the undoped structures.
引用
收藏
页码：L1362 / L1364
页数：3
相关论文
共 50 条
  • [1] Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers
    Ryu, MY
    Yu, PW
    Oh, E
    Sone, C
    Nam, O
    Park, Y
    [J]. SOLID STATE COMMUNICATIONS, 2001, 118 (11) : 547 - 551
  • [2] Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
    Christian, George
    Kappers, Menno
    Massabuau, Fabien
    Humphreys, Colin
    Oliver, Rachel
    Dawson, Philip
    [J]. MATERIALS, 2018, 11 (09)
  • [3] Optical properties of InGaN/GaN multiple quantum wells
    Allegre, J
    Lefebvre, P
    Juillaguet, S
    Camassel, J
    Knap, W
    Chen, Q
    Khan, MA
    [J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1295 - 1298
  • [4] Optical properties of InGaN/GaN multiple quantum wells
    Lee, JI
    Lee, CM
    Leem, JY
    Lim, KS
    Han, IK
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (03) : 386 - 389
  • [5] Reconfigurable optical properties in InGaN/GaN quantum wells
    Shmagin, IK
    Muth, JF
    Kolbas, RM
    Mack, MP
    Abare, AC
    Keller, S
    Coldren, LA
    Mishra, UK
    DenBaars, SP
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (11) : 1455 - 1457
  • [6] Enhanced luminescence of InGaN/GaN multiple quantum wells with indium doped GaN barriers
    Xing Yan-Hui
    Jun, Han
    Liu Jian-Ping
    Jun, Deng
    Niu Nan-Hui
    Shen Guang-Di
    [J]. ACTA PHYSICA SINICA, 2007, 56 (12) : 7295 - 7299
  • [7] Comparison of optical properties between GaN and InGaN quantum wells
    Riblet, P
    Hirayama, H
    Kinoshita, A
    Hirata, A
    Sugano, T
    Aoyagi, Y
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 216 (01): : 287 - 290
  • [8] The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells
    Li, T.
    Wei, Q. Y.
    Fischer, A. M.
    Huang, J. Y.
    Huang, Y. U.
    Ponce, F. A.
    Liu, J. P.
    Lochner, Z.
    Ryou, J. -H.
    Dupuis, R. D.
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (04)
  • [9] Optical properties of InGaN/GaN quantum wells on sapphire and bulk GaN substrate
    Dworzak, M.
    Stempel, T.
    Hoffmann, A.
    Franssen, G.
    Grzanka, S.
    Suski, T.
    Czernecki, R.
    Leszczynski, M.
    Grzegory, I.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2078 - 2081
  • [10] Optical spectroscopy of InGaN/GaN quantum wells
    Berkowicz, E
    Gershoni, D
    Bahir, G
    Abare, AC
    DenBaars, SP
    Coldren, LA
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 216 (01): : 291 - 300
12345