Ultra-Low Voltage Integrated Receivers in Nanoscale CMOS

被引：0

作者：

Balankutty, Ajay ^{[1
]}

Kinget, Peter R. ^{[2
]}

机构：

[1] Intel Corp, Radio Integrat Res, Hillsboro, OR 97124 USA

[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

2011 IEEE 54TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2011年

关键词：

IF RECEIVER;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

CMOS process scaling has lead to lower supply voltages for transistors. The sub-IV supply voltage in modern CMOS nanoscale processes coupled with the need to provide highly integrated solutions in embedded applications requires us to rethink the design of analog and RF circuits. We present design techniques for RF transceivers operating from ultra voltage (ULV) supplies in standard digital processes. In this paper we systematically look at the architectural and circuit design techniques that enable the robust design of ULV wireless receivers. We will present three integrated receivers operating from 0.5-0.6V that target WPAN and wide-area cellular network applications.

引用

页数：4

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