Nanocrystalline silicon thickness dependence of transmission characteristics of CPWs on surface-passivated high-resistivity silicon substrates

被引：3

作者：

Wang, R. -L. ^{[1
]}

Su, Y. -K. ^{[2
]}

Chen, C. -J. ^{[2
]}

Hsueh, T. -J.

机构：

[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, Yanchao Township 824, Kaohsiung Count, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 20期

关键词：

D O I：

10.1049/el.2011.2030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nanocrystalline silicon (nc-Si) layer was used as a surface-passivation layer (SPL) on a high-resistivity silicon (HR-Si) substrate. The transmission loss (alpha(TL)) of coplanar waveguide (CPW) lines on oxide/SPL/HR-Si substrates with an nc-Si SPL of 100, 200, and 400 nm was measured and analysed. The experimental results demonstrate that the thicker nc-Si SPL provides better passivation effect and the alpha(TL) can be down to 0.69 dB/cm. The equivalent series resistance and shunt conductance were extracted to investigate the dependence of alpha(TL) on the SPL thickness. The cross-talk effect of CPWs on oxide/SPL/HR-Si substrates was also studied.

引用

页码：1133 / U124

页数：2

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