Dysprosium silicide nanowires on Si(110)

被引：51
|
作者：
He, Z [1 ]
Stevens, M
Smith, DJ
Bennett, PA
机构：
[1] Arizona State Univ, Sci & Engn Mat Program, Tempe, AZ 85287 USA
[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
[3] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 25期
关键词：
D O I：
10.1063/1.1636244
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Dysprosium deposited on Si(110) at 720 degreesC is observed to form self-assembled silicide nanowire (NW) structures with a single orientation and average dimensions of 15 nm wide and microns long. The NW sides grow into the substrate along inclined Si{111} planes, forming a V-shaped cross section with an interface that is coherent on one side, described by DySi2(0001)//Si(11 (1) under bar) and DySi2[01 (1) under bar0]//Si[(1) under bar 10], and incoherent on the other. This type of growth represents a physical mechanism for self-assembled NW formation that does not require anisotropic lattice mismatch. (C) 2003 American Institute of Physics.
引用
收藏
页码：5292 / 5294
页数：3
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