A 950-MHz fully differential Class-E Power Amplifier in 0.18μm CMOS for Wireless Communications

被引：0

作者：

Datta, Sambit ^{[1
]}

Saha, Hiranmay ^{[2
]}

机构：

[1] IIT Kharagpur, Kharagpur, W Bengal, India

[2] Univ Jadavpur, Elect & Telecommun Engn, Kolkata, India

来源：

2009 INTERNATIONAL CONFERENCE ON EMERGING TRENDS IN ELECTRONIC AND PHOTONIC DEVICES AND SYSTEMS (ELECTRO-2009) | 2009年

关键词：

Class-E power amplifier; CMOS radio frequency (RF); wireless communication; power-added efficiency;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design of a high efficiency, 950MHz fully differential power amplifier for wireless communications in a standard 0.18 mu m CMOS technology. The power amplifier employs a fully differential class-E topology to achieve high power efficiency by exploiting its soft-switching property. The concept of mode locking is used in the design, in which the amplifier acts as an oscillator whose output is forced to run at the input frequency. The proposed power amplifier can deliver 23.5dBm output power to a 50 Omega load at 950MHz with 41% power-added efficiency (PAE) from 1.8V supply voltage.

引用

页码：88 / +

页数：2

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