New CdTe quantum sensor, with improved spatial resolution, for fast X-ray and γ-ray imaging

被引：2
|
作者：
Gerstenmayer, JL [1 ]
Bonnin, O [1 ]
Gerbe, V [1 ]
Glasser, F [1 ]
Peyret, O [1 ]
机构：
[1] CEA, BIII, F-91680 Bruyeres Le Chatel, France
来源：
SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷
关键词：
D O I：
10.1557/PROC-487-281
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have designed and tested a new compact, very sensitive (<1 mu Rad), X-ray quantum sensor for high energy (0.5 - 10 MeV) flash imaging. Monte Carlo simulations have been computed for several interesting detector materials (CdZnTe, HgI2-a, EGO, CsI, LSO...). From these calculations, we obtain general design rules and curves which allow one to optimize the pixel size of a sensor to the dose levels, An experimental CdZnTe detector array and its performance is presented.
引用
收藏
页码：281 / 286
页数：6
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