New CdTe quantum sensor, with improved spatial resolution, for fast X-ray and γ-ray imaging

被引：2

作者：

Gerstenmayer, JL ^{[1
]}

Bonnin, O ^{[1
]}

Gerbe, V ^{[1
]}

Glasser, F ^{[1
]}

Peyret, O ^{[1
]}

机构：

[1] CEA, BIII, F-91680 Bruyeres Le Chatel, France

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have designed and tested a new compact, very sensitive (<1 mu Rad), X-ray quantum sensor for high energy (0.5 - 10 MeV) flash imaging. Monte Carlo simulations have been computed for several interesting detector materials (CdZnTe, HgI2-a, EGO, CsI, LSO...). From these calculations, we obtain general design rules and curves which allow one to optimize the pixel size of a sensor to the dose levels, An experimental CdZnTe detector array and its performance is presented.

引用

页码：281 / 286

页数：6

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