Photo- and Electroluminescence of Layered Structures Based on Silicon Oxide and Nitride Films

被引：0

作者：

Romanov, I ^{[1
]}

Komarov, F. F. ^{[2
,3
]}

Parkhomenko, I ^{[1
]}

Vlasukova, L. ^{[1
]}

Kovalchuk, N. ^{[4
]}

Mudryi, A. ^{[5
]}

Zhivulko, V ^{[5
]}

机构：

[1] Belarusian State Univ, Minsk, BELARUS

[2] AN Sevchenko Inst Appl Phys Problems, Minsk, BELARUS

[3] Natl Univ Sci & Technol, Moscow, Russia

[4] Joint Stock Co Integral, Minsk, BELARUS

[5] Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk, BELARUS

来源：

MICROSTRUCTURE AND PROPERTIES OF MICRO- AND NANOSCALE MATERIALS, FILMS, AND COATINGS (NAP 2019) | 2020年 / 240卷

关键词：

D O I：

10.1007/978-981-15-1742-6_35

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the present work, silicon nitride, and oxide films, as well as two-layered SiNx/SiO2 and three-layered SiO2/SiNx/SiO2 structures, were fabricated on p-type Si-substrates. The structure and element composition was studied by scanning electron microscopy and Rutherford backscattering spectroscopy, respectively. It was shown, spectral positions of photoluminescence maxima, as well as edge absorption, were determined by stoichiometry of SiNx layers. No electroluminescence signal was registered from single-layered silicon nitride films. The intense band at 1.9 eV dominated the electroluminescence spectra of single-layered silica film as well as two- and three-layered structures. It was attributed to silane groups in SiO2 layers. The contribution of emission from silicon nitride layers into electroluminescence of the two- and three-layered structures is discussed.

引用

页码：361 / 366

页数：6

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