Low power-loss 4H-SiC Schottky rectifiers with high blocking voltage

High voltage 4H-SiC Schottky rectifiers with low specific on-resistances of 1.0 similar to 2.0x10(-3)Omega cm(2) were successfully fabricated. Employing edge termination formed by B+ implantation at the periphery of Schottky contacts, the blocking voltages over 1100V could be realized without increase in reverse leakage current, and a maximum blocking voltage of 1750V could be achieved. The devices withstood high reverse voltages over 1100V even at high temperature (150 degrees C). Furthermore, Ti/4H-SiC structure is suitable for a reduction of power loss during on-state, because the barrier height of Ti for 4H-SiC is the optimum value of 1.0 similar to 1.3V.