Structural and optical measurements of residual strain and relaxation of lattice mismatched InGaAs/GaAs heterostructures

被引：1
|
作者：
Gelczuk, Lukasz [1 ]
Dabrowska-Szata, Maria [1 ]
Serafinczuk, Jaroslaw [1 ]
Motyka, Marcin [2 ]
Misiewicz, Jan [2 ]
机构：
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50370 Wroclaw, Poland
[2] Warsaw Univ Technol, Inst Phys, Wroclaw, Poland
来源：
2007 INTERNATIONAL STUDENTS AND YOUNG SCIENTISTS WORKSHOP PHOTONICS AND MICROSYSTEMS, PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/STYSW.2007.4559117
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper the effect of strain relaxation on the structural and optical properties of lattice mismatched InGaAs/GaAs heterostructures has been studied by means of X-ray diffractometry and photoreflectance spectroscopy. X-ray diffractometry reveals anisotropic strain relaxation, related to asymmetry in the formation of misfit dislocations, causing distortion of the epilayer unit cell and lowering its symmetry to orthorhombic. By using room temperature photoreflectance spectroscopy, we observed residual strain induced a splitting of valence band energies. The results were analyzed by means of deformation potential theory that enables us to estimate the extent of strain relaxation and the values of residual strain in the layers.
引用
收藏
页码：23 / +
页数：2
相关论文
共 50 条
  • [31] In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping
    Sasaki, Takuo
    Suzuki, Hidetoshi
    Sai, Akihisa
    Takahasi, Masamitu
    Fujikawa, Seiji
    Ohshita, Yoshio
    Yamaguchi, Masafumi
    DEFECTS IN INORGANIC PHOTOVOLTAIC MATERIALS, 2010, 1268 : 45 - 50
  • [32] The role of morphology in the relaxation of strain in InGaAs/GaAs
    Rodríguez, BP
    Millunchick, JM
    JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) : 64 - 69
  • [33] Strain relaxation of lattice-mismatched In0.2Ga0.8As/GaAs superlattices on GaAs(001) substrates
    Lentzen, M
    Gerthsen, D
    Forster, A
    Urban, K
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 357 - 360
  • [34] Deep traps and optical properties of partially strain-relaxed InGaAs/GaAs heterostructures
    Gelczuk, L.
    Motyka, M.
    Misiewicz, J.
    Dabrowska-Szata, A.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2008, 147 (2-3): : 166 - 170
  • [35] Strain relaxation in InGaAs lattice engineered substrates
    Chavarkar, P
    Mathis, SK
    Zhao, L
    Keller, S
    Speck, JS
    Mishra, UK
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (07) : 944 - 949
  • [36] Strain relaxation in InGaAs lattice engineered substrates
    P. Chavarkar
    S. K. Mathis
    L. Zhao
    S. Keller
    J. S. Speck
    U. K. Mishra
    Journal of Electronic Materials, 2000, 29 : 944 - 949
  • [37] Makyoh topography study of the curvature and surface morphology of mismatched InGaAs/GaAs heterostructures
    Nemcsics, A
    Riesz, F
    Szabó, J
    Horváth, ZE
    Gurbán, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 177 (01): : 231 - 236
  • [38] THE THERMAL-STABILITY OF LATTICE MISMATCHED INGAAS GROWN ON PATTERNED GAAS
    WATSON, GP
    AST, DG
    ANDERSON, TJ
    HAYAKAWA, Y
    PATHANGEY, B
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (10) : 703 - 708
  • [39] A NEW LATTICE-RELAXATION MODE IN INGAAS ON GAAS
    FUJII, T
    YAMAZAKI, S
    JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 489 - 494
  • [40] Anisotropic strain relaxation and surface morphology related to asymmetry in the formation of misfit dislocations in InGaAs/GaAs heterostructures
    Gelczuk, L.
    Dabrowska-Szata, M.
    Serafinczuk, J.
    Masalska, A.
    Lusakowska, E.
    Dluzewski, P.
    MATERIALS SCIENCE-POLAND, 2008, 26 (01): : 157 - 166
12345