SPICE-compatible microwave model of an optically controlled high electron mobility transistor

被引：0

作者：

Chakrabarti, P

Mishra, BK

Madheswaran, M

机构：

来源：

INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING | 1996年 / 6卷 / 06期

关键词：

D O I：

10.1002/(SICI)1522-6301(199611)6:6<399::AID-MMCE3>3.0.CO;2-L

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The effect of optical illumination on the microwave characteristics of an optically gated AlGaAs/GaAs HEMT has been studied theoretically. This article describes an integral approach to the problem which includes the calculation of the capacitance and the sheet concentration of the two-dimensional (2D) electron gas in the illuminated condition. The changes in the various intrinsic parameters of the device under the illuminated condition have been utilized to calculate the Y-parameters of the device at microwave frequencies. The lumped circuit model of the device in the illuminated condition has been obtained with the various components determined from the Y-parameters. The attractive feature of the present model is that it is fully compatible with commonly used circuit simulation packages like SPICE. (C) 1996 John Wiley & Sons, Inc.

引用

页码：399 / 410

页数：12

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