An accurate SPICE-compatible circuit model for power FLYMOSFETs

被引：0
|
作者：
Galadi, A.
Morancho, F.
Benhida, K.
Hassani, M. M.
机构：
[1] CNRS, LAAS, F-31077 Toulouse 4, France
[2] Univ Cadi Ayyad, Marrakech, Morocco
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2007年 / 39卷 / 03期
关键词：
D O I：
10.1051/epjap:2007120
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, a new SPICE-compatible circuit model for low voltage, low on- resistance power FLYMOSFETs is presented for the. first time. In this new structure, the improvement of the on-resistance has been obtained by inserting. floating islands in the lowly doped layer. Our modelling is based on device physics, analytical study and on experimental characterization. The inter- electrode capacitances are modelled accurately as nonlinear functions, and good agreement between simulation and measurements is found.
引用
收藏
页码：219 / 226
页数：8
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